Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Bipolar transistorDescription: High power NPN epitaxial planar bipolar transistor90435+$19.385750+$18.5573200+$18.0933500+$17.97741000+$17.86142500+$17.72885000+$17.64607500+$17.5631 -
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Category: Bipolar transistorDescription: STMICROELECTRONICS 2STC5242 Single transistor bipolar, NPN, 230 V, 30 MHz, 130 W, 8 A, 80 hFE33845+$6.083125+$5.632550+$5.3171100+$5.1819500+$5.09182500+$4.97915000+$4.934110000+$4.8665 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 650V 80A 62500mW 3Pin(3+Tab) TO-3pF Tube87675+$18.706050+$17.9066200+$17.4589500+$17.34701000+$17.23512500+$17.10725000+$17.02727500+$16.9473 -
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Category: Classification of electronic componentsDescription: Single transistor, IGBT, trench gate, 30 A, 1.6 V, 115 W, 600 V, TO-3P, 3 pins304310+$10.1160100+$9.6102500+$9.27301000+$9.25612000+$9.18875000+$9.10447500+$9.037010000+$9.0032 -
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Category: MOSpipeDescription: STMICROELECTRONICS STFW60N65M5 Power Field Effect Transistor, MOSFET, N-channel, 46 A, 650 V, 0.049 ohm, 10 V, 4 V23081+$85.819910+$82.0886100+$81.4170250+$80.8946500+$80.07371000+$79.70062500+$79.17825000+$78.7304 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 60A 58000mW 3Pin(3+Tab) TO-3pF Tube91565+$14.171050+$13.5654200+$13.2263500+$13.14151000+$13.05672500+$12.95985000+$12.89937500+$12.8387 -
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Category: IGBTtransistorDescription: Single transistor, IGBT, 80 A, 1.8 V, 62.5 W, 600 V, TO-3PF, 3 pins87615+$23.793150+$22.7763200+$22.2069500+$22.06461000+$21.92222500+$21.75955000+$21.65787500+$21.5562 -
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Category: MOSpipeDescription: NChannel 1200 V, 1.95 ohms (typical), 6-SuperMESH3 power MOSFET packaged in TO-3PF, TO-220, and TO-247 N-channel 1200 V, 1.95 Ohm typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages20481+$60.363210+$56.8997100+$54.3268250+$53.9310500+$53.53521000+$53.08992500+$52.69415000+$52.4467 -
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Category: IGBTtransistorDescription: IGBT Transistor 1250V 25A trench gte field stop IGBT19595+$24.575950+$23.5256200+$22.9375500+$22.79041000+$22.64342500+$22.47545000+$22.37037500+$22.2653 -
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Category: IGBTtransistorDescription: STGWF30NC60S Series 600 V 31 A Fast IGBT Flange Installation - TO-3PF532410+$7.6812100+$7.2971500+$7.04111000+$7.02832000+$6.97715000+$6.91317500+$6.861910000+$6.8363 -
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Category: Classification of electronic componentsDescription: Turbo 2 ultrafast high voltage rectifier4925 -
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Category: Classification of electronic componentsDescription: Diode Switching 600V 30A 3Pin(3+Tab) TO-3pF Tube96155+$13.141450+$12.5798200+$12.2653500+$12.18671000+$12.10812500+$12.01825000+$11.96217500+$11.9059 -
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Category: Diode arrayDescription: Ultrafast Recovery 6000V 12pF Diode rectifier94635+$17.638950+$16.8851200+$16.4630500+$16.35751000+$16.25192500+$16.13135000+$16.05597500+$15.9806 -
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Category: MOSpipeDescription: N Channel MDmesh ™ M5 series, STMicroelectronics MDmesh M5 power MOSFET optimized for high-power PFC and PWM topologies. The main features include low-pass loss per silicon area and low gate charge per silicon wafer area. They are designed for energy-efficient, compact, and reliable hard switching applications such as solar converters, consumer product power supplies, and electronic lighting controls. ###MOSFET transistor, STMicroelectronics98451+$96.671310+$92.4682100+$91.7116250+$91.1232500+$90.19851000+$89.77822500+$89.18985000+$88.6854 -
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Category: IGBTtransistorDescription: Single transistor, IGBT, 40 A, 1.55 V, 168 W, 650 V, TO-3P, 3 pins18495+$17.230650+$16.4942200+$16.0819500+$15.97881000+$15.87572500+$15.75795000+$15.68437500+$15.6106 -
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Category: IGBTtransistorDescription: IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.24161+$165.702410+$161.379750+$158.0656100+$156.9129200+$156.0484500+$154.89571000+$154.17522000+$153.4548 -
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Category: IGBTtransistorDescription: HB Series 650 V 30 A High Speed Trench Field Cut Off IGBT - TO-3P86285+$22.306150+$21.3528200+$20.8190500+$20.68551000+$20.55212500+$20.39965000+$20.30427500+$20.2089 -
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Category: Diode arrayDescription: STMICROELECTRONICS STTH30AC06CP Standard recovery diode, dual common cathode, 600 V, 30 A, 2.25 V, 140 A new27365+$13.932450+$13.3370200+$13.0035500+$12.92021000+$12.83682500+$12.74165000+$12.68207500+$12.6225 -
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Category: Bipolar transistorDescription: High power NPN epitaxial planar bipolar transistor43555+$13.335750+$12.7658200+$12.4466500+$12.36681000+$12.28702500+$12.19595000+$12.13897500+$12.0819 -
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Category: Bipolar transistorDescription: STMICROELECTRONICS 2STA1962 Single transistor bipolar, PNP, 230 V, 30 MHz, 130 W, 8 A, 80 hFE74845+$11.765550+$11.2627200+$10.9812500+$10.91081000+$10.84042500+$10.75995000+$10.70967500+$10.6594 -
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Category: Bipolar transistorDescription: High power PNP epitaxial planar bipolar transistor24565+$12.166850+$11.6469200+$11.3557500+$11.28291000+$11.21012500+$11.12695000+$11.07497500+$11.0229 -
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Category: Bipolar transistorDescription: STMICROELECTRONICS 2STC4468 Single transistor bipolar, NPN, 140 V, 20 MHz, 100 W, 7 A, 70 hFE71335+$3.801625+$3.520050+$3.3229100+$3.2384500+$3.18212500+$3.11175000+$3.083510000+$3.0413 -
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Category: Bipolar transistorDescription: High power NPN epitaxial planar bipolar transistor61095+$12.114250+$11.5965200+$11.3066500+$11.23411000+$11.16162500+$11.07885000+$11.02707500+$10.9752 -
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Category: Bipolar transistorDescription: High power PNP epitaxial planar bipolar transistor724110+$8.3292100+$7.9127500+$7.63511000+$7.62122000+$7.56575000+$7.49637500+$7.440810000+$7.4130 -
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Category: IGBTtransistorDescription: STGWT60V60DF Series 600 V 60 A High Speed Trench Field Cut Off IGBT - TO-3P89491+$212.255510+$206.718450+$202.4733100+$200.9967200+$199.8893500+$198.41281000+$197.48992000+$196.5671 -
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Category: IGBTtransistorDescription: STMICROELECTRONICS STGWT80V60DF Single transistor, IGBT, 120 A, 1.85 V, 469 W, 600 V, TO-3P, 3-pin new95571+$52.308710+$49.3074100+$47.0778250+$46.7348500+$46.39181000+$46.00592500+$45.66295000+$45.4486 -
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Category: IGBTtransistorDescription: IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.46195+$12.337750+$11.8104200+$11.5151500+$11.44131000+$11.36752500+$11.28325000+$11.23047500+$11.1777 -
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Category: IGBTtransistorDescription: IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.49645+$16.681950+$15.9690200+$15.5697500+$15.46991000+$15.37012500+$15.25615000+$15.18487500+$15.1135 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 120A 469000mW 3Pin(3+Tab) TO-3P Tube22781+$37.831010+$35.6604100+$34.0479250+$33.7998500+$33.55171000+$33.27272500+$33.02465000+$32.8695 -
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Category: IGBTtransistorDescription: IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.40615+$26.893650+$25.7443200+$25.1007500+$24.93981000+$24.77892500+$24.59505000+$24.48017500+$24.3652
